Post‐growth graphene transfer to a variety of host substrates for circuitry fabrication has been among the most popular subjects since its successful development via chemical vapor deposition in the past decade. Fast and reliable evaluation tools for its morphological characteristics are essential for the development of defect‐free transfer protocols. The implementation of conventional techniques, such as Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy in production quality control at an industrial scale is difficult because they are limited to local areas, are time consuming, and their operation is complex. However, through a one‐shot measurement within a few seconds, phase‐shifting interferometry (PSI) successfully scans ≈1 mm² of transferred graphene with a vertical resolution of ≈0.1 nm. This provides crucial morphological information, such as the surface roughness derived from polymer residues, the thickness of the graphene, and its adhesive strength with respect to the target substrates. Graphene samples transferred via four different methods are evaluated using PSI, Raman spectroscopy, and AFM. Although the thickness of the nanomaterials measured by PSI can be highly sensitive to their refractive indices, PSI is successfully demonstrated to be a powerful tool for investigating the morphological characteristics of the transferred graphene for industrial and research purposes.

中文翻译：

---

通过相移干涉术轻松获得转移石墨烯的形态学鉴定。

自从过去十年通过化学气相沉积技术成功开发后，将生长后石墨烯转移到各种用于电路制造的基质上一直是最受欢迎的主题之一。快速，可靠的形态学评估工具对于开发无缺陷传输协议至关重要。在工业规模的生产质量控制中，诸如拉曼光谱法，原子力显微镜（AFM）和透射电子显微镜之类的常规技术的实施是困难的，因为它们局限于局部地区，费时且操作复杂。但是，通过几秒钟内的一次测量，相移干涉术（PSI）可以成功扫描≈1mm ²转移的石墨烯的垂直分辨率约为0.1 nm。这提供了关键的形态学信息，例如源自聚合物残留物的表面粗糙度，石墨烯的厚度及其相对于目标基材的粘合强度。使用PSI，拉曼光谱和AFM对通过四种不同方法转移的石墨烯样品进行评估。尽管通过PSI测量的纳米材料的厚度可能对其折射率高度敏感，但PSI已被成功证明是用于研究工业和研究目的转移的石墨烯的形态特征的强大工具。