Abstract In this study, we demonstrated a far ultraviolet-C (far-UVC) emitter using Al0.73Ga0.27N/AlN multiple quantum wells (MQWs) by carbon nanotube based cold cathode electron-beam (C-beam) excitation. The Al0.73Ga0.27N/AlN MQW structure was grown on AlN/sapphire by high-temperature metal-organic chemical vapor deposition. The large-area far-UVC emission (276 mm2) was investigated using C-beam, as a function of anode voltage (VA) and anode current (IA), and the near-band-edge emission of Al0.73Ga0.27N/AlN MQWs was observed at a peak wavelength of 233 nm, with a VA of 4 kV, an IA of 0.5 mA. The results suggest that the large-area C-beam pumped far-UVC emitter could be a promising sterilization light source.

中文翻译：

---

使用基于碳纳米管的冷阴极电子束泵浦 Al0.73Ga0.27N/AlN 多量子阱的大面积远紫外 C 发射

摘要 在本研究中，我们通过基于碳纳米管的冷阴极电子束 (C-beam) 激发展示了使用 Al0.73Ga0.27N/AlN 多量子阱 (MQW) 的远紫外-C (far-UVC) 发射器。Al0.73Ga0.27N/AlN MQW 结构通过高温金属有机化学气相沉积在 AlN/蓝宝石上生长。使用 C 束研究大面积远 UVC 发射 (276 mm2)，作为阳极电压 (VA) 和阳极电流 (IA) 的函数，以及 Al0.73Ga0.27N/ 的近带边缘发射在 233 nm 的峰值波长处观察到 AlN MQW，VA 为 4 kV，IA 为 0.5 mA。结果表明，大面积 C 束泵浦远紫外线发射器可能是一种很有前途的杀菌光源。