Abstract In the present work, we study the stark shift of binding energy for a Hydrogenic donor impurity confined within a circular quantum ring composed from three different semiconducting heterostructures AlxGa1-xN/GaN, InxGa1-xN/GaN, Ga1−xAlxAs/GaAs under the electric fields along different directions. We supplied a position-dependent electric field by using a charged rod of radius ‘a' and charge density λ. By placing the charged rod and donor impurity in different positions, we have studied the changes in the on and off-center donor binding energies, system energy levels, probability densities, average position of the electron, and the probability finding electron inside the quantum ring. We describe the redshift and blueshift of the donor impurity binding energy when different parameters change.

中文翻译：

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带电棒电场影响下量子环上和离心给体杂质结合能的明显偏移

摘要 在目前的工作中，我们研究了限制在由三种不同半导体异质结构 AlxGa1-xN/GaN、InxGa1-xN/GaN、Ga1−xAlxAs/GaAs 组成的圆形量子环内的氢供体杂质的结合能的明显变化。不同方向的电场。我们通过使用半径为“a”和电荷密度为 λ 的带电棒来提供位置相关的电场。通过将带电棒和施主杂质放置在不同的位置，我们研究了离心和离心施主结合能、系统能级、概率密度、电子的平均位置以及在量子环内发现电子的概率的变化。 . 我们描述了当不同参数改变时供体杂质结合能的红移和蓝移。