Memristor device opens a new pathway for artificial synapses in the neuromorphic system. In this work, we demonstrate the enhanced memristive and synaptic charactersitcs in SnO₂-based memristor device with a thin amorphous zinc tin oxide (α-ZTO) film and TiON interlayer that is confirmed by X-ray photoelectron spectroscopy (XPS) analysis. A more linear and symmetric long-term potentiation (LTP) and long-term depression (LTD) with lower power consumption are achieved through resistance change induced by repetitive pulse inputs in the double n-type SnO₂/ZTO semiconductor device. Moreover, the transition from short-term memory (STM) to long-term memory (LTM) under repetitive identical pulse inputs is demonstrated. The oxygen vacancy-based switching mechanism model and energy band diagram is proposed for W/SnO₂/ZTO/TiN memristor device. Experimental results show that W/SnO₂/ZTO/TiN memristor as a artificial synapses could be of great benefit for hardware neuromorphic computing.

忆阻器设备为神经形态系统中的人工突触开辟了一条新途径。在这项工作中，我们证明了具有薄非晶锌氧化锡（α-ZTO）膜和TiON夹层的SnO ₂基忆阻器器件具有增强的忆阻和突触特性，这已通过X射线光电子能谱（XPS）分析得到了证实。通过双n型SnO _2中重复脉冲输入引起的电阻变化，实现了线性度更高，对称性更强的长期增强（LTP）和长期降低（LTD）的功耗。/ ZTO半导体器件。此外，还演示了在重复的相同脉冲输入下从短期记忆（STM）过渡到长期记忆（LTM）的过程。针对W / SnO ₂ / ZTO / TiN忆阻器器件，提出了基于氧空位的开关机制模型和能带图。实验结果表明，W / SnO ₂ / ZTO / TiN忆阻器作为人工突触可能对硬件神经形态计算有很大的帮助。