Abstract Large target is essential for the fabrication of semiconductor devices, and the reliability of sputtering target backplate assembly plays a key role on the quality of sputtered films in the devices. In this work, the interface of an 8-inch Co target soldered on Cu backplate by In alloy is studied and characterized systematically. At the Cu backplate side, there are many void defects, and only one kind of intermetallic compound (IMC), namely Cu11In9, was observed after soldering. This Cu11In9 layer consists of two sublayers, which were formed at different reaction stage during soldering. At the Co target side, the voids are small, and the formed IMC is Ni28In72 phase. There is a thin Ni(V) layer at the Co side, and the V element is concentrated and stable at the interface, while Co will diffuse into Ni(V) layer to form a solid solution. The interfacial reaction and IMC formation related mechanisms are discussed, which can provide guidance for the design and fabrication of large-scale sputtering target assembly in microelectronic industry.

中文翻译：

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Co/In/Cu溅射靶组件焊接后的界面反应和微观结构

摘要 大型靶材对于半导体器件的制造至关重要，溅射靶材背板组件的可靠性对器件中溅射薄膜的质量起着关键作用。在这项工作中，系统地研究和表征了用 In 合金焊接在 Cu 背板上的 8 英寸 Co 靶的界面。在Cu背板侧，有很多空洞缺陷，焊接后仅观察到一种金属间化合物（IMC），即Cu11In9。该 Cu11In9 层由两个亚层组成，它们是在焊接过程中的不同反应阶段形成的。在Co靶侧，空隙很小，形成的IMC为Ni28In72相。Co侧有薄薄的Ni(V)层，V元素在界面处集中且稳定，而Co会扩散到Ni(V)层中形成固溶体。