One of the decisive factors in realizing ohmic contact of silver (Ag) paste metallization on silicon (Si) wafers is the presence of Ag colloids in the glass phase at the Ag/Si interface. The Ag colloids are formed during the reaction between glass frit and Ag powder in the sintering process of Ag paste; thus, it is difficult to control the quantity of Ag colloids formed. In this study, we attempted to prepare a glass embedded with a large number of Ag colloids first to further improve the quality of ohmic contact of Ag paste metallization. In the PbO–TeO 2 –SiO 2 glass system, a route was found for increasing the solubility of Ag in the glass melt by precipitating the Ce 1.88 Pb 2.12 O 6.53 crystal, which enabled a molar amount of recrystallized Ag colloids reach a high level of about 1/10 of oxides in the glass. As a result, the resistivity of the Ag/Si contact can be decreased substantially. The formation mechanism of Ag colloids in glass is revealed by various characterization and analysis methods, such as X-ray diffraction, electron energy loss spectroscopy, X-ray photoelectron spectroscopy, UV–visible and so on. Furthermore, it was also found that too high content of Ag in the glass melt would destroy the pyramid texture surface structure of Si wafers, which is not conducive to obtain high-quality Ag/Si ohmic contact. For this concern, optimal content of Ag colloids formed in glass is discussed.

中文翻译：

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主动将银胶体嵌入用于银浆的玻璃中，以改善硅片上的金属化欧姆接触

在硅 (Si) 晶片上实现银 (Ag) 膏金属化欧姆接触的决定性因素之一是 Ag/Si 界面处的玻璃相中存在 Ag 胶体。银胶体是在银浆烧结过程中玻璃料与银粉反应形成的；因此，难以控制形成的Ag胶体的量。在这项研究中，我们尝试首先制备嵌入大量银胶体的玻璃，以进一步提高银浆金属化的欧姆接触质量。在PbO-TeO 2 -SiO 2 玻璃体系中，发现了通过沉淀Ce 1.88 Pb 2.12 O 6.53 晶体来增加Ag在玻璃熔体中的溶解度的途径，这使得重结晶的Ag胶体摩尔量达到高水平玻璃中约 1/10 的氧化物。因此，Ag/Si 触点的电阻率可以显着降低。通过X射线衍射、电子能量损失谱、X射线光电子能谱、紫外-可见等多种表征和分析方法，揭示了玻璃中银胶体的形成机制。此外，还发现玻璃熔体中Ag含量过高会破坏Si晶片的金字塔织构表面结构，不利于获得高质量的Ag/Si欧姆接触。为此，讨论了玻璃中形成的 Ag 胶体的最佳含量。此外，还发现玻璃熔体中Ag含量过高会破坏Si晶片的金字塔织构表面结构，不利于获得高质量的Ag/Si欧姆接触。为此，讨论了玻璃中形成的 Ag 胶体的最佳含量。此外，还发现玻璃熔体中Ag含量过高会破坏Si晶片的金字塔织构表面结构，不利于获得高质量的Ag/Si欧姆接触。为此，讨论了玻璃中形成的 Ag 胶体的最佳含量。