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X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals
Journal of Applied Crystallography ( IF 5.2 ) Pub Date : 2020-07-30 , DOI: 10.1107/s1600576720008961
Thomas Wicht 1 , Stephan Müller 1 , Roland Weingärtner 1 , Boris Epelbaum 1 , Sven Besendörfer 1 , Ulrich Bläß 1 , Matthias Weisser 2 , Tobias Unruh 2 , Elke Meissner 1, 3
Affiliation  

AlN single crystals grown by physical vapor transport have been analyzed by X-ray methods to evaluate dislocation types, densities and spatial distribution within the crystal. Potential changes of the AlN crystal quality during growth, both within the axial growth direction and within lateral expansion areas, have been investigated.

中文翻译:

物理蒸汽传输生长的块状 AlN 单晶的 X 射线表征

已经通过 X 射线方法分析了通过物理蒸汽传输生长的 AlN 单晶,以评估晶体内的位错类型、密度和空间分布。已经研究了生长过程中 AlN 晶体质量在轴向生长方向和横向扩展区域内的潜在变化。
更新日期:2020-07-30
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