Plasma‐assisted deposition of iron oxide thin films for photoelectrochemical water splitting,Plasma Processes and Polymers

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Plasma‐assisted deposition of iron oxide thin films for photoelectrochemical water splitting
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2020-08-12 , DOI: 10.1002/ppap.202000121
Piera Bosso ₁ , Antonella Milella _{1,

2} , Gianni Barucca ₃ , Paolo Mengucci ₃ , Vincenza Armenise ₁ , Fiorenza Fanelli ₂ , Roberto Giannuzzi ₄ , Vincenzo Maiorano ₄ , Francesco Fracassi _{1,

2}

Affiliation

Iron oxide thin films for photoelectrochemical (PEC) water splitting were deposited by radiofrequency sputtering of an iron target in argon/oxygen plasma mixtures, followed by thermal annealing. The chemical composition and structure of deposited film can be tuned by controlling the gas feed composition and the annealing temperature. The thermal treatment extensively improves the PEC water splitting performances of the films deposited at the lowest O₂ percentages (0–1%), allowing to obtain photocurrent densities up to 1.20 mA/cm² at 1.23 V_RHE. Increasing the oxygen percentage in the plasma feed allows the direct growth of photoactive films; the best result is found for the hematite film produced at 50% O₂, characterized by a photocurrent density of 0.21 at 1.23 V_RHE.

中文翻译：

等离子体辅助沉积氧化铁薄膜用于光电化学水分解

通过在氩气/氧气等离子体混合物中进行铁靶的射频溅射，沉积用于光电化学（PEC）分解的氧化铁薄膜。沉积膜的化学组成和结构可以通过控制气体进料组成和退火温度来调节。热处理极大地改善了以最低O ₂百分比（0-1％）沉积的薄膜的PEC水分解性能，从而在1.23 V _RHE时可获得高达1.20 mA / cm ^2的光电流密度。增加等离子体进料中的氧气百分比可以使光敏膜直接生长；对于以50％O ₂生成的赤铁矿薄膜，发现了最佳结果的特征是在1.23 V _RHE下光电流密度为0.21 。

更新日期：2020-08-12

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