One-step method for the electrodeposition of thin Cu₂ZnSnSe₄ (CZTSe) film onto a polyaniline/FTO/glass substrate was developed. Polyaniline film was preliminary obtained also by electrochemical deposition onto the FTO/glass substrate. The nucleation of CZTSe in the course of the film formation on the polyaniline surface was studied by chronoamperometry method. This process can be described by the instantaneous crystallization model. According to SEM data, the films consist of 25–50 nm nanocrystals which can form large crystallites. Photocurrent was established to increase up to 20 times in the CZTSe/polyaniline/FTO/glass heterojunction in comparison with the polyaniline free structure. In the heterojunction, polyaniline acts as a hole transport layer improving the charge transfer to the FTO electrode and preventing circuit shorting because of porosity of the CZTSe film.

Graphical abstract

一步法电沉积薄Cu ₂ ZnSnSe ₄在聚苯胺/ FTO /玻璃基板上显影（CZTSe）膜。聚苯胺膜也是通过电化学沉积到FTO /玻璃基板上而初步获得的。用计时安培法研究了聚苯胺表面成膜过程中CZTSe的成核现象。这个过程可以用瞬时结晶模型来描述。根据SEM数据，薄膜由25–50 nm的纳米晶体组成，可以形成大的微晶。与不含聚苯胺的结构相比，在CZTSe /聚苯胺/ FTO /玻璃异质结中建立的光电流增加了20倍。在异质结中，聚苯胺用作空穴传输层，可改善电荷转移至FTO电极并防止由于CZTSe膜的多孔性而引起的电路短路。

图形概要