当前位置: X-MOL 学术J. Electron. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Atmospheric Modified Thiol-Based Solution Deposition for Cu 2 ZnSn(S,Se) 4 Absorber Layer
Journal of Electronic Materials ( IF 2.1 ) Pub Date : 2020-08-12 , DOI: 10.1007/s11664-020-08375-5
Ruilan Chen , Guonan Cui , Yanchun Yang , Yuemin Li , H. Alata , Xiao Tian , O. Tegus

Abandoning the traditional deposition of as-prepared Cu2ZnSnS4 (CZTS) thin films in a glove box, a modified thiol-based solution system suitable for deposition in air is described to further reduce device production costs. In this modified approach, metal salts and thiourea are used as the starting materials and are dissolved in a mixed solution of thioglycolic acid and 2-methoxyethanol, forming a homogeneous precursor solution. The as-deposited CZTS thin films are obtained by spin-coating the precursor solution in air, followed by the selenization process to form large-grained Cu2ZnSn(S,Se)4 thin films. Combining the microstructural results with compositional analyses, the optimal selenization conditions for the Cu2ZnSn(S,Se)4 absorber layer were found to be 540°C and 10 min.



中文翻译:

Cu 2 ZnSn(S,Se)4吸收层的常压改性硫醇基溶液沉积

放弃了在手套箱中传统制备的Cu 2 ZnSnS 4(CZTS)薄膜的传统沉积方法,描述了一种适用于在空气中沉积的改进的基于硫醇的溶液系统,以进一步降低装置的生产成本。在这种改进的方法中,金属盐和硫脲用作原料,并溶解在巯基乙酸和2-甲氧基乙醇的混合溶液中,形成均质的前体溶液。沉积后的CZTS薄膜是通过在空气中旋涂前体溶液,然后进行硒化处理以形成大晶粒的Cu 2 ZnSn(S,Se)4薄膜而获得的。将微观结构结果与成分分析相结合,得出Cu 2的最佳硒化条件ZnSn(S,Se)4吸收层的温度为540°C,10分钟。

更新日期:2020-08-12
down
wechat
bug