We investigate experimentally and numerically the polarization hysteresis loop of a PZT thin film utilized in MEMS actuators. A fully coupled electromechanical phase-field technique is employed for the numerical prediction part, starting from a simplified model of the thin film proposed on the basis of several experimental evidences. It is shown that polycrystalline nature of the film plays a fundamental role. In particular the simulations demonstrate that grains with dielectric interfaces and stochastic orientation of the crystallographic directions have a significant impact on the overall hysteresis loop.

中文翻译：

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多晶PZT薄膜磁滞回线的模拟

我们通过实验和数值研究了用于MEMS执行器的PZT薄膜的极化磁滞回线。数值预测部分采用了完全耦合的机电相场技术，该技术是从根据一些实验证据提出的薄膜简化模型开始的。结果表明，膜的多晶性质起着基本作用。特别地，模拟表明具有介电界面和晶体学方向的随机取向的晶粒对整个磁滞回线具有显着影响。