We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond using focussed, mask-less irradiation with Ar 8+ ions with sub-micron three dimensional placement accuracy. The ion optical system was optimised and is characterised via secondary electron imaging. The smallest measured foci are below 200 nm, using objective aperture diameters of 5 and 10 µ m, showing that nanoscale ion implantation using an EBIS is feasible.

中文翻译：

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使用聚焦的高电荷离子进行纳米级离子注入

我们介绍了一种基于聚焦离子束（FIB）的离子注入机，该离子注入机配备了能够产生高电荷离子的电子束离子源（EBIS）。作为其利用的一个例子，我们演示了使用聚焦的，无掩模的Ar 8+离子辐照，在亚微米三维定位精度下直接在金刚石中写入氮空位中心。优化了离子光学系统，并通过二次电子成像对其进行了表征。使用5和10 µm的物镜孔径，最小的测量焦点在200 nm以下，这表明使用EBIS进行纳米级离子注入是可行的。