Vacuum arc evaporation is a prospective technique to fabricate hard and wear material due to its high ion energy and plasma density. Nevertheless, target tends to be poisoned by the compound layer in common reactive gases such as acetylene. Then the coating deposition rate and the properties of the coatings would be strongly influenced. Thus, the formation of the compound layer has to be inhibited. Previous studies pointed out the potential of pulse-enhanced vacuum arc evaporation mode for inhibiting the formation of the compound layer. Within the presented study, motion of group spots (GSs), optical emission spectra, and substrate current based on PEVAE mode were examined entirely. The result shows that the area ratio of the compound layer in the target was decreased from about 75% to 42%. The ionization degree of titanium and mean substrate current could be substantially increased by up to 40% and 100%, respectively, in a mixture gas of nitrogen and acetylene due to larger plasma density indicated by higher spectra intensity of plasmas. All of the above made PEVAE prospective candidate to inhibit the formation of the compound layer. Beyond this PEVAE would lead to higher coating rate and denser coating in nitrogen plus acetylene atmosphere.

中文翻译：

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脉冲增强真空电弧蒸发过程中乙炔对钛靶中毒的影响

由于其高离子能量和等离子体密度，真空电弧蒸发是一种制造硬质耐磨材料的前瞻性技术。然而，目标往往会被乙炔等常见反应气体中的化合物层毒化。那么涂层沉积速率和涂层的性能将受到强烈影响。因此，必须抑制化合物层的形成。先前的研究指出了脉冲增强真空电弧蒸发模式在抑制化合物层形成方面的潜力。在所提出的研究中，基于 PEVAE 模式的群点 (GS) 的运动、光发射光谱和基板电流进行了全面检查。结果表明，靶中化合物层的面积比从约75%降低到42%。在氮气和乙炔的混合气体中，由于等离子体的更高光谱强度表明更大的等离子体密度，钛的电离度和平均衬底电流可以分别显着增加高达 40% 和 100%。所有上述都使 PEVAE 成为抑制化合物层形成的潜在候选者。除此之外，PEVAE 将导致在氮气和乙炔气氛中更高的涂层速率和更致密的涂层。