Abstract Dilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band gap energy depending on pressure can be divided into two regions. In the low pressure range, the band gap energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band gap energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.

中文翻译：

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稀氮化物和锑 GaNxSbyAs1−x−y 带隙能量的压力依赖性

摘要 稀氮化锑GaNAsSb合金可以看作是在主体材料GaAs中加入N和Sb原子形成的合金。在此条件下，其带隙能量取决于压力可分为两个区域。在低压范围内，带隙能量是由两个因素造成的。一种是 N 能级与 GaAs 的 Γ 导带最小值 (CBM) 之间的耦合相互作用。另一个是 Sb 能级与 GaAs 的 Γ 价带最大值 (VBM) 之间的耦合相互作用。在高压范围内，带隙能量还取决于两个因素。一是 GaAs 的 N 级与 X CBM 之间的耦合相互作用。另一个是 Sb 能级与 GaAs 的 Γ VBM 之间的耦合相互作用。此外，已经发现，GaNAsSb 中Γ CBM 和 X CBM 之间的能量差大于 GaAs 中的能量差。这是由于两个因素。一是 N 能级与 GaAs 的 Γ CBM 之间的耦合相互作用。另一个是 GaAs 的 N 级和 X CBM 之间的耦合相互作用。