This paper confirms that the electrical characteristics of FinFETs such as the on/off ratio, drain-induced barrier lowering (DIBL), and sub-threshold slope (SS) can be improved by optimizing the FinFET spacer structure. An operating voltage that can maintain a life of 10 years or more when hot-carrier injection is extracted. An excellent on/off ratio ($7.73\times {10}^7$) and the best SS value were found at 64.29 mV/dec with a spacer length of 90 nm. Under hot carrier-injection conditions, the supply voltages that meet the 10-year lifetime condition are 1.11 V, 1.18 V, and 1.32 V for spacer lengths of 40 nm, 80 nm, and 120 nm, respectively. This experiment confirmed that, even at low drain voltages, the shorter is the spacer length, the greater is the deterioration. However, this increasing maximum operating voltage is very small when compared to the increase in the driving voltage required to achieve similar performance when the spacer length is increased; therefore, the effective life is expected to decrease. The results indicate that structural optimization must be performed to increase the driving current of the FinFET and prevent degradation of the analog performance.

中文翻译：

---

根据间隔物长度的大尺寸FinFET的电气特性

本文证实，通过优化FinFET垫片结构，可以改善FinFET的电特性，例如开/关比，漏极引起的势垒降低（DIBL）和亚阈值斜率（SS）。提取热载流子注入后，可以维持10年以上寿命的工作电压。出色的开/关比（$7.73\times {10}^7$）和最佳SS值发现在64.29 mV / dec，间隔物长度为90 nm。在热载流子注入条件下，间隔长度分别为40 nm，80 nm和120 nm时，满足10年寿命条件的电源电压分别为1.11 V，1.18 V和1.32V。该实验证实，即使在低漏极电压下，间隔物长度越短，劣化越大。但是，与增加间隔物长度时达到类似性能所需的驱动电压的增加相比，这种增加的最大工作电压很小。因此，预期有效寿命会减少。结果表明必须进行结构优化以增加FinFET的驱动电流并防止模拟性能下降。