当前位置：
X-MOL 学术
›
Phys. Status Solidi B
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Influence Mechanism of Barium Interface Layer on the Interfacial Properties of n‐Type 4H‐SiC Metal–Oxide–Semiconductor Capacitors
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-08-11 , DOI: 10.1002/pssb.202000269 Zhiqiang Bai 1 , Xiaoyan Tang 1 , Yimeng Zhang 1 , Yifan Jia 1 , Jiamin Jie 1 , Qingwen Song 1 , Yuming Zhang 1
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-08-11 , DOI: 10.1002/pssb.202000269 Zhiqiang Bai 1 , Xiaoyan Tang 1 , Yimeng Zhang 1 , Yifan Jia 1 , Jiamin Jie 1 , Qingwen Song 1 , Yuming Zhang 1
Affiliation
|
The 4H‐SiC/SiO2 interface quality can be significantly improved by adding an alkaline earth metal interface layer. To study the passivation mechanism of the alkaline earth metal barium (Ba), a supercell model with a transition layer is established. As shown in the results from first‐principles calculations, the bandgap increases and the density of states decreases when SiBaO or OBaO structures are introduced into the transition layer. 4H‐SiC/Ba interface layer/SiO2 capacitors with different annealing conditions are fabricated. X‐ray photoelectron spectroscopy results show that Ba mainly exists in the form of BaO2 (corresponding to the OBaO structure) after annealing in 5% O2 in Ar atmosphere, and there are fewer types of suboxides in the interface than those annealed in Ar. A small amount of Ba also combines with SiO2 to form SiBaxOy compounds (corresponding to the SiBaO structure). The correctness of the theoretical analysis is verified by capacitance–voltage measurements. The physical mechanism of Ba passivation is analyzed in this article, which helps to improve the performance of SiC metal–oxide–semiconductor (MOS) structure devices.
中文翻译：
钡界面层对n型4H-SiC金属-氧化物-半导体电容器的界面特性的影响机理
通过添加碱土金属界面层，可以显着提高4H-SiC / SiO 2界面质量。为了研究碱土金属钡（Ba）的钝化机理，建立了具有过渡层的超级电池模型。如在从第一原理计算的结果所示，如果Si带隙增大，态密度降低巴 O或O 巴 O结构被引入到过渡层。制作了具有不同退火条件的4H-SiC / Ba界面层/ SiO 2电容器。X射线光电子能谱分析结果表明，Ba主要以BaO 2的形式存在（对应于O res巴 ø结构）在5％氧气退火后2在Ar气氛，并有较少类型以不同于在Ar中进行退火处理的接口低价氧化物。巴少量也与二氧化硅结合了2形成Si 的Ba X ø ý化合物（对应于Si 巴 Ò结构）。理论分析的正确性通过电容-电压测量得到了验证。本文分析了Ba钝化的物理机理，这有助于提高SiC金属-氧化物-半导体（MOS）结构器件的性能。
更新日期：2020-08-11
中文翻译：
钡界面层对n型4H-SiC金属-氧化物-半导体电容器的界面特性的影响机理
通过添加碱土金属界面层，可以显着提高4H-SiC / SiO 2界面质量。为了研究碱土金属钡（Ba）的钝化机理，建立了具有过渡层的超级电池模型。如在从第一原理计算的结果所示，如果Si带隙增大，态密度降低巴 O或O 巴 O结构被引入到过渡层。制作了具有不同退火条件的4H-SiC / Ba界面层/ SiO 2电容器。X射线光电子能谱分析结果表明，Ba主要以BaO 2的形式存在（对应于O res巴 ø结构）在5％氧气退火后2在Ar气氛，并有较少类型以不同于在Ar中进行退火处理的接口低价氧化物。巴少量也与二氧化硅结合了2形成Si 的Ba X ø ý化合物（对应于Si 巴 Ò结构）。理论分析的正确性通过电容-电压测量得到了验证。本文分析了Ba钝化的物理机理，这有助于提高SiC金属-氧化物-半导体（MOS）结构器件的性能。
京公网安备 11010802027423号