The accurate physical parameters of the semiconductor devices are critical to the physics‐based circuit simulation, which solves the carrier transport equations to model the semiconductor devices. However, the conventional method extracts physical parameters from low‐frequency measurements such as the DC I‐V curve, which cannot work at high frequencies. To overcome this problem, we propose a physical parameter extraction method of the PIN diode working well from DC to microwave frequencies. Specifically, because the transit‐time effects are dependent on the working frequencies and input power levels, the operation modes of the PIN diode can be divided into three cases from DC to microwave frequencies; therefore, the proposed method extracts the parameters from three measured curves, including the DC I‐V curve, a small‐signal, and a large‐signal voltage waveform both at a microwave frequency. Experiments of a PIN diode SMP1330 circuit show that the error of the conventional method is about 45% at frequencies above 300 MHz, but the maximum error of the proposed method is only 9.5% from DC to 2 GHz. Moreover, the conventional method is unable to characterize the conductance modulation phenomenon, which leads to unexpected signal reflections in PIN limiter circuits and the missing of information in radio transceivers.

中文翻译：

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PIN二极管的参数提取方法，用于在宽频率范围内进行基于物理的电路仿真

半导体器件的准确物理参数对于基于物理的电路仿真至关重要，该仿真解决了载流子传输方程以对半导体器件进行建模。但是，常规方法从低频测量中提取物理参数，例如DC I - V曲线，不能在高频下工作。为了克服这个问题，我们提出了一种从直流到微波频率都能正常工作的PIN二极管的物理参数提取方法。具体来说，由于渡越时间的影响取决于工作频率和输入功率水平，因此PIN二极管的工作模式可以分为三种情况，从直流频率到微波频率。因此，建议的方法从三个测量曲线中提取参数，包括DC I - V微波频率下的曲线，小信号和大信号电压波形。PIN二极管SMP1330电路的实验表明，在300 MHz以上的频率下，常规方法的误差约为45％，但是从DC到2 GHz，该方法的最大误差仅为9.5％。此外，传统方法无法表征电导调制现象，这导致PIN限制器电路中出现意想不到的信号反射，并导致无线收发器中信息丢失。