F82H were irradiated by Kr²⁺ ions with and without helium up to 1 displacement per atom at 500 °C, and cavity distribution around grain boundary was investigated by transmission electron microscopy. In F82H irradiated by Kr²⁺ ions, the cavity number density and the cavity size tended to be decreased and increased as a function of the distance from grain boundary, respectively. This gradient of cavity distribution seemed to be depending on the character of grain boundary. While, the size distribution of cavity seemed to be homogeneous in F82H irradiated by Kr²⁺+He⁺ ions. This indicates that even prior austenite grain boundary hardly acts as sinks for vacancies if a high number density of helium atoms exists, which is probably due to the decrease in vacancy mobility by helium trapping.

F82H在500°C下用含和不含氦的Kr ²⁺离子辐照至每个原子1个位移，并通过透射电子显微镜研究了晶界周围的空穴分布。在用Kr ²⁺离子照射的F82H中，腔数密度和腔尺寸分别倾向于随着距晶界距离的增加而减小和增大。空穴分布的这种梯度似乎取决于晶界的特征。而在Kr ²⁺ + He ⁺辐照的F82H中腔体的尺寸分布似乎是均匀的离子。这表明，如果存在高数量的氦原子密度，则即使先前的奥氏体晶界也几乎不充当空位的下沉，这可能是由于氦俘获导致空位迁移率降低。