Abstract Advances in Metal-Oxide-Semiconductor (MOS) capacitors fabrication and processing techniques have significantly reduced the adverse effects of processing on the disruption of the ideal MOS devices. However, changes in interface state density and series resistance have remained significant issues for the performance of MOS devices. In this paper, the impacts of multi-layers on the electrical interface states and series resistance characteristics of Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS capacitors is reported, by analyzing Capacitance – Voltage (C – V), conductance (G/ω – V), series resistance, and interface states density. Ideal characteristics have been observed for obtained series resistance (Rs) and interface state density (Dit), and the calculated values of Dit are in order of (1010 eV2Cm−2). The outcomes have demonstrated that the Rs and the Dit are essential factors that influence the electrical characteristics of the MOS capacitors. Furthermore, interfacial layers are the cause of variations in the Rs and Dit.

中文翻译：

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串联电阻和界面态对Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS电容器电性能的影响

摘要 金属氧化物半导体 (MOS) 电容器制造和加工技术的进步显着降低了加工对理想 MOS 器件中断的不利影响。然而，界面态密度和串联电阻的变化仍然是影响 MOS 器件性能的重要问题。本文通过分析电容-电压(C-V)、电导，报告了多层对Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS电容器电界面态和串联电阻特性的影响(G/ω – V)、串联电阻和界面态密度。已观察到获得的串联电阻 (Rs) 和界面态密度 (Dit) 的理想特性，并且 Dit 的计算值按 (1010 eV2Cm-2) 的顺序排列。结果表明，Rs 和 Dit 是影响 MOS 电容器电气特性的重要因素。此外，界面层是导致 Rs 和 Dit 变化的原因。