In the traditional porous reaction-bonded silicon carbide (RBSC) ceramic, the phenomenon of residual silicon usually happens due to the usage of monatomic silicon as reactant, which greatly weakens its high-temperature properties, as well as corrosion resistance. In this paper, Si₃N₄ was successfully utilized as silicon source for the preparation of porous RBSC ceramics. Only SiC phase in the final bulks was detected by X-ray, indicating the achievement of avoiding residual silicon. There were homogeneous and isotropous pores with 48.3% of porosity for as-acquired RBSC ceramic. Its average pore size was ~1.6 μm, while the pore throat size was less than 1 μm. Compared with porous oxide-bonded SiC ceramic, porous RBSC ceramic showed superiority in N₂ permeability (217 m³/(m²·h·bar)), as well as flexural strength at normal temperature (35.5 ± 2.3 MPa), and high temperature of 1000 °C (21.2 ± 1.7 MPa). Moreover, porous RBSC could keep intact after exposing in boiling solutions of 10 wt% H₂SO₄ and 1 wt% NaOH for 12 h, indicating its chemical stability in the acid and alkaline environment.

在传统的多孔反应结合碳化硅（RBSC）陶瓷中，残留硅的现象通常是由于使用单原子硅作为反应物而发生的，这大大削弱了其高温性能以及耐腐蚀性。本文成功地将Si ₃ N ₄用作制备多孔RBSC陶瓷的硅源。X射线仅检测到最终块体中的SiC相，这表明可以避免残留硅。对于所获得的RBSC陶瓷，存在均匀且各向同性的孔隙，孔隙率为48.3％。它的平均孔径为〜1.6μm，而孔喉的尺寸小于1μm。与多孔氧化物结合SiC陶瓷相比，多孔RBSC陶瓷在N _2方面具有优越性透气性（217 m ³ /（m ² ·h·bar））以及常温（35.5±2.3 MPa）和1000°C高温（21.2±1.7 MPa）时的抗弯强度。此外，多孔RBSC在10 wt％H ₂ SO ₄和1 wt％NaOH的沸腾溶液中暴露12 h后仍能保持完整，表明其在酸性和碱性环境下的化学稳定性。