The thermal properties of a nanostructured semiconductor are affected by multi-physical fields, such as stress and electromagnetic fields, causing changes in temperature and strain distributions. In this work, the influence of stress-dependent thermal conductivity on the heat transfer behavior of a GaN-based nanofilm is investigated. The finite element method is adopted to simulate the temperature distribution in a prestressed nanofilm under heat pulses. Numerical results demonstrate the effect of stress field on the thermal conductivity of GaN-based nanofilm, namely, the prestress and the thermal stress lead to a change in the heat transfer behavior in the nanofilm. Under the same heat source, the peak temperature of the film with stress-dependent thermal conductivity is significantly lower than that of the film with a constant thermal conductivity and the maximum temperature difference can reach 8.2 K. These results could be useful for designing GaN-based semiconductor devices with higher reliability under multi-physical fields.

纳米结构半导体的热性能会受到多种物理场（例如应力和电磁场）的影响，从而引起温度和应变分布的变化。在这项工作中，研究了应力相关的导热率对GaN基纳米膜的传热行为的影响。采用有限元方法模拟了热脉冲作用下预应力纳米膜的温度分布。数值结果证明了应力场对GaN基纳米薄膜导热性的影响，即预应力和热应力导致纳米薄膜中传热行为的改变。在同一个热源下