In this paper operational transconductance amplifiers (OTA) were designed with nanowire (NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) and compared with NW Si MOSFET devices. Lookup tables with experimental data were used to model the transistors and simulate the OTAs. At the same dimensions and transistor efficiency region, the TFET OTAs have larger gain than the MOSFET circuit. The Ge-source TFET OTA presents the highest differential gain (105 dB), followed by the Si TFET (96 dB) and the SiGe-source TFET (90 dB), with the MOSFET presenting the lowest gain (51 dB). However, the MOSFET has the best gain-bandwidth product (GBW) (9.2 MHz) followed by the Ge-source TFET (1.6 MHz), the SiGe-source TFET (900 kHz) and the Si TFET (41 kHz). The second group of OTAs, where the same power consumption was considered and where the gain of the MOSFET OTA and the GBW of the TFETs’ circuits were increased was also studied. The gain of the MOSFET...

中文翻译：

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使用实验数据，通过具有Si，SiGe和Ge源的纳米线隧道FET设计的运算跨导放大器

在本文中，使用具有不同源材料（Si，SiGe和Ge）的纳米线（NW）隧道场效应晶体管（TFET）设计了运算跨导放大器（OTA），并与NW Si MOSFET器件进行了比较。具有实验数据的查找表用于对晶体管进行建模并模拟OTA。在相同的尺寸和晶体管效率区域，TFET OTA具有比MOSFET电路更大的增益。Ge源TFET OTA呈现最高的差分增益（105 dB），其次是Si TFET（96 dB）和SiGe源TFET（90 dB），而MOSFET呈现最低增益（51 dB）。但是，MOSFET具有最佳的增益带宽积（GBW）（9.2 MHz），其次是Ge源TFET（1.6 MHz），SiGe源TFET（900 kHz）和Si TFET（41 kHz）。第二组OTA，还考虑了相同的功耗，并研究了MOSFET OTA的增益和TFET电路的GBW的增加。MOSFET的增益...