We propose a silicon based quantum well nanolaser structure based on surface plasmon polariton (SPP). The InGaAs/InP multi-quantum well in this structure can be obtained by direct epitaxy growth in nanoscale V-grooved trenches on silicon substrate by the high aspect ratio trapping method; and through the deposition of the metal layer and dielectric layer to excite the property of the SPP. The finite element method is used to simulate the electric field distribution of the laser mode and the variation of the mode characteristics, waveguide characteristics and threshold characteristic of the optical communication band with the geometric parameters. The results show that this structure has a better ability to limit the optical field and can realize deep sub-wavelength constraint of the output optical field at a lower threshold level, which is an expected idea of the high-performance and miniaturized silicon-based nanolaser.

中文翻译：

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基于表面等离子体激元的硅基量子阱纳米激光器的仿真设计

我们提出了一种基于表面等离子激元（SPP）的硅基量子阱纳米激光结构。这种结构的InGaAs / InP多量子阱可以通过高深宽比捕获法在硅衬底上的纳米级V型沟槽中直接外延生长而获得。通过沉积金属层和介电层来激发SPP的特性。有限元方法被用来模拟激光模式的电场分布以及几何参数对光通信频带的模式特性，波导特性和阈值特性的变化。结果表明，该结构具有更好的光场限制能力，可以在较低的阈值水平上实现对输出光场的深亚波长约束，