Metal–semiconductor–metal (MSM) photodetectors (PDs) are used for optoelectronic integrated circuits (OEICs) because they allow easy integration with a pre-existing circuit. However, traditional MSM PDs require an external bias to separate the electron–hole pairs because they have a symmetrical structure. This study proposes a method to create an asymmetric Schottky barrier height in a MSM PD with a symmetrical interdigital electrode. A localized surface fluorine plasma treatment is applied to a specific area of the a-IGZO film underneath the contacts of the MSM PDs, which produces a localized oxygen deficiency. The photocurrent spontaneously diffuses because there is an asymmetric Schottky barrier. This gives the device self-powering characteristics. The a-IGZO MSM PD with a symmetrical interdigitate electrode operates at a zero bias and has a responsivity of 5 mA/W. The open-circuit voltage under illumination at 365 nm (2 mW/cm²) is 0.20 V. This study demonstrates that this method is applicable to other MSM PDs, particularly those that use an amorphous oxide semiconductor as the active layer.

中文翻译：

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使用局部表面氟等离子体处理实现自供电的InGaZnO MSM紫外光电探测器

金属-半导体-金属（MSM）光电探测器（PD）用于光电集成电路（OEIC），因为它们可以轻松地与现有电路集成。但是，传统的MSM PD由于具有对称结构，因此需要外部偏置来分隔电子-空穴对。这项研究提出了一种在具有对称叉指电极的MSM PD中创建不对称肖特基势垒高度的方法。将局部表面氟等离子体处理应用于MSM PD触点下方的a-IGZO膜的特定区域，这会导致局部缺氧。由于存在不对称的肖特基势垒，因此光电流自发扩散。这赋予了设备自供电特性。带有对称叉指电极的a-IGZO MSM PD在零偏压下运行，响应度为5 mA / W。365 nm（2 mW / cm）光照下的开路电压²）为0.20V。这项研究表明，该方法适用于其他MSM PD，特别是那些使用非晶氧化物半导体作为有源层的PD。