Abstract The present work encloses structural and optical characterization of copper (I) selenide (Cu2Se) thin films. The films having thickness 85 nm have been deposited using thermal evaporation technique in initial step of work. The structural and morphological studies of deposited thin films are then done by X-ray diffraction (XRD), scanning electron microscope (SEM), and surface profilometer measurements. Later on, ultraviolet-visible-near-infrared (UV-VIS-NIR) spectrophotometer and Raman spectroscopic measurements are performed for optical characterization of films. The structure and morphology measurements reveal that deposited material of films is crystalline. The optical band gap estimated from the optical transmission spectra of the film has been found 1.90 eV. The mean values of refractive index, extinction coefficient, real and imaginary dielectric constant are received 3.035, 0.594, 9.623, and 3.598, respectively. The obtained results are compared and analyzed for justification and application of Cu2Se thin films.

中文翻译：

---

热蒸发 Cu2Se 薄膜的结构和波长相关光学研究

摘要 目前的工作包括铜 (I) 硒化物 (Cu2Se) 薄膜的结构和光学表征。在工作的初始步骤中，已经使用热蒸发技术沉积了厚度为 85 nm 的薄膜。然后通过 X 射线衍射 (XRD)、扫描电子显微镜 (SEM) 和表面轮廓仪测量对沉积的薄膜进行结构和形态研究。随后，紫外-可见-近红外 (UV-VIS-NIR) 分光光度计和拉曼光谱测量用于薄膜的光学表征。结构和形态测量表明薄膜的沉积材料是结晶的。已发现从薄膜的光学透射光谱估计的光学带隙为 1.90 eV。折射率平均值、消光系数、实部和虚部介电常数分别为 3.035、0.594、9.623 和 3.598。对获得的结果进行比较和分析，以证明 Cu2Se 薄膜的合理性和应用。