The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here the magnetic and electronic properties of CrSBr are reported, an air‐stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, T_N = 132 ± 1 K, CrSBr adopts an A‐type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is Δ_E = 1.5 ± 0.2 eV with a corresponding PL peak centered at 1.25 ± 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin‐based electronics.

中文翻译：

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层状反铁磁性在范德华半导体 CrSBr 中引起大的负磁阻。

最近在可剥离范德华 (vdW) 化合物家族中发现的磁性已引起人们对这些材料的极大兴趣，用于基础研究和技术应用。然而，当前的 vdW 磁体受到其对空气的极端敏感性、低有序温度和差的电荷传输特性的限制。本文报道了 CrSBr 的磁性和电子特性，这是一种空气稳定的 vdW 反铁磁半导体，可以垂直于堆叠轴进行劈裂。低于其 Néel 温度，T _N = 132 ± 1 K，CrSBr 采用 A 型反铁磁结构，每个单独的层在内部铁磁有序，层沿堆叠方向反铁磁耦合。扫描隧道光谱和光致发光 (PL) 显示电子间隙为_ΔE  = 1.5 ± 0.2 eV，相应的 PL 峰以 1.25 ± 0.07 eV 为中心。使用磁输运测量，证明了 CrSBr 中磁序和输运特性之间的强耦合，从而导致在 vdW 材料中独一无二的大负磁阻响应。这些发现将 CrSBr 确立为一种有前途的材料平台，可提高 vdW 磁体在自旋电子领域的适用性。