Argon ions with energy of 1 MeV and 500 keV are implanted at various fluences into Asahi and Saint Gobain clear float glasses used for resistive plate chamber (RPC) detector fabrication. The decreased size of voids (V_f) in the selected glasses is interpreted as an increased short-range order of the glass structure at higher fluence of argon ion implantation. The increased local temperature influences the diffusion of argon ions via trapping in the silica glass voids for higher implantation fluence. The slight increase in bandgap energy (E_g) in the glass RPC detector materials at higher argon ion implantation fluence observed reduced electrical conductivity. The increased energy bandgap in the float glass RPC detector samples enhanced surface resistivity, consequently reducing the leakage current.

将能量为1 MeV和500 keV的氩离子以不同的注量注入到Asahi和Saint Gobain透明浮法玻璃中，该玻璃用于电阻板腔（RPC）检测器的制造。所选玻璃中空隙尺寸（V _f）的减小可解释为在较高通量的氩离子注入下玻璃结构的短程顺序增加。升高的局部温度通过捕获在石英玻璃空隙中而影响氩离子的扩散，从而获得更高的注入通量。带隙能量略有增加（E _g）在玻璃RPC检测器材料中，在较高的氩离子注入通量下观察到电导率降低。浮法玻璃RPC检测器样品中增加的能带隙提高了表面电阻率，因此减小了泄漏电流。