This paper investigates how an applied magnetic field, the quantum size, and spin polarization effect an asymmetric heterostructure composed of InAs, GaAs, and GaSb semiconductors. Using a theoretical approach based on the transfer matrix method and taking into account the Rashba and Dresselhaus spin-orbit interactions, we calculate the spin-dependent transmissions of spin-up and -down electrons and their spin polarization across our heterostructure. Our results indicate that the transmission coefficients and the resonance states can be tuned to a red or blue shift by adjusting the quantum wells and the barrier widths. Two resonance states are detected when the width of the central barrier L_bc is reduced. Furthermore, we show that the impact of an applied magnetic field on the spin polarization can polarize 100% of either spin -up or -down electrons by selecting the appropriate range of incident energy and suitable magnetic field. These results are useful for the design and fabrications of spin-filter devices operating under an applied magnetic field.

本文研究施加的磁场，量子大小和自旋极化如何影响由InAs，GaAs和GaSb半导体组成的不对称异质结构。使用基于转移矩阵方法的理论方法，并考虑到Rashba和Dresselhaus自旋轨道相互作用，我们计算了自旋上下电子的自旋相关传输及其在我们异质结构上的自旋极化。我们的结果表明，通过调节量子阱和势垒宽度，可以将透射系数和共振态调整为红移或蓝移。当中央势垒L _bc的宽度检测到两个共振状态降低了。此外，我们表明，通过选择合适的入射能量范围和合适的磁场，施加的磁场对自旋极化的影响可使100％的自旋向上或向下电子极化。这些结果对于在外加磁场下工作的自旋滤波器装置的设计和制造是有用的。