This article proposes a simple method of designing a highly efficient wideband parallel-circuit (PC) class-E/F ₃ power amplifiers (PAs). A combination of the double-reactance compensation technique and fundamental as well as third-harmonic series-tuned resonators is used for the design of the PC class-E/F ₃ PA output matching network. The step-by-step design flow and corresponding equations to calculate each component's value are also presented. Based on this method, the simulated optimal impedances of the reactance compensation network present almost a constant over the desired band, which satisfies the requirement of the wideband performance. Measured results reveal that using a GaN high electron mobility transistor (HEMT), the fabricated PA demonstrates the measured drain efficiencies of 60.1–80.5%, as well as output powers of 36.0–40.9 dBm from 350 to 730 MHz (fractional bandwidth = 70.4%).

中文翻译：

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高效宽带并行电路E / F ₃类功率放大器的设计方法

本文提出了一种设计高效宽带并行电路（PC）E / F ₃类功率放大器（PA）的简单方法 。PC级E / F ₃的设计采用了双电抗补偿技术和基本谐波以及三次谐波串联调谐谐振器的组合 PA输出匹配网络。还介绍了逐步设计流程以及用于计算每个组件值的相应方程式。基于这种方法，电抗补偿网络的仿真最佳阻抗在所需频带上几乎呈现恒定，这满足了宽带性能的要求。测量结果表明，使用GaN高电子迁移率晶体管（HEMT），制造的PA表现出测得的漏极效率为60.1–80.5％，以及从350至730 MHz的输出功率为36.0–40.9 dBm（分数带宽= 70.4％ ）。