A state-of-the-art 3.3-kV/450-A hybrid power module for the next generation traction inverter of rolling stock is reported in this paper, combining the silicon (Si) insulated-gate bipolar transistor (IGBT) and silicon carbide Schottky barrier diodes (SBDs) chips. Compared with the existing hybrid technology at the same voltage level, this module is characterized by a half-bridge topology, in which 6 IGBT and 12 SBD chips are integrated in each switch. The outnumbering of the diodes represents a promising mitigation to the low availability of SBDs at this voltage level. Both static and dynamic test of this module and an equivalent Si-based module are carried out comparatively. Apart from describing the features of compactness, low-inductance, and good current distribution among chips, this module is characterized by low turn-on current overshooting and turn-on loss of IGBTs, negligible diode reverse recovery time and loss, as well as flexible allowance of IGBT turn-on current rising rate $\boldsymbol{dI}/\boldsymbol{dt}$. A parameterized study is carried out to benchmark the advantage of this new topology. Based on the experimental results, the performance of the hybrid module in a three-phase traction inverter circuit is also evaluated by means of electro-thermal simulation. The hybrid module distinguishes itself by describing much lower power loss and junction temperature than its Si-based counterpart.

中文翻译：

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用于牵引逆变器应用的半桥拓扑结构中的 3.3 kV Si-SiC 混合功率模块的表征

本文报道了一种用于下一代机车车辆牵引逆变器的最先进的 3.3-kV/450-A 混合功率模块，结合了硅 (Si) 绝缘栅双极晶体管 (IGBT) 和碳化硅肖特基势垒二极管 (SBD) 芯片。与现有相同电压等级的混合技术相比，该模块的特点是半桥拓扑，其中每个开关集成了6个IGBT和12个SBD芯片。二极管的数量过多代表了在此电压水平下 SBD 低可用性的有希望的缓解。该模块的静态和动态测试与等效的基于硅的模块进行了比较。除了描述体积小、电感低、芯片间电流分布好等特点外，该模块的特点是IGBT的开通电流过冲和开通损耗小，二极管反向恢复时间和损耗可以忽略不计，IGBT开通电流上升速率灵活容限$\boldsymbol{dI}/\boldsymbol{ dt}$。进行参数化研究以衡量这种新拓扑的优势。基于实验结果，还通过电热仿真评估了混合模块在三相牵引逆变器电路中的性能。混合模块的独特之处在于其功率损耗和结温比其基于硅的模块低得多。进行参数化研究以衡量这种新拓扑的优势。基于实验结果，还通过电热仿真评估了混合模块在三相牵引逆变器电路中的性能。混合模块通过描述比其基于硅的模块低得多的功率损耗和结温来区分自己。进行参数化研究以衡量这种新拓扑的优势。基于实验结果，还通过电热仿真评估了混合模块在三相牵引逆变器电路中的性能。混合模块通过描述比其基于硅的模块低得多的功率损耗和结温来区分自己。