A novel class-E power amplifier (PA) using a current-injection (CI) technique is presented in this letter. An auxiliary current source, which injects the current into the load during each turn-off period of switching transistors, is introduced into the conventional class-E PA. Without the need of impedance transforming or increasing of the supply voltage, the proposed PA provides a new method to increase the output power. The proposed circuit is fabricated in a Taiwan Semiconductor Manufacturing Company’s (TSMC’s) 65-nm low power (LP) CMOS process. Measurement results show that the output power of the injected circuit reaches up to 14.12 dBm with a drain efficiency of 41% at 1.8 GHz. The output power improves more than 3 dB compared to the conventional class-E PA without CI.

中文翻译：

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电流注入 E 类功率放大器

这封信中介绍了一种使用电流注入 (CI) 技术的新型 E 类功率放大器 (PA)。传统的 E 类 PA 中引入了一个辅助电流源，在开关晶体管的每个关断期间将电流注入负载。无需阻抗变换或增加电源电压，所提出的 PA 提供了一种增加输出功率的新方法。建议的电路是在台积电 (TSMC) 的 65 纳米低功耗 (LP) CMOS 工艺中制造的。测量结果表明，注入电路的输出功率高达 14.12 dBm，1.8 GHz 时的漏极效率为 41%。与没有 CI 的传统 E 类 PA 相比，输出功率提高了 3 dB 以上。