This letter presents a $V$ -band switchless bidirectional power amplifier-low noise amplifier (PALNA) in a SiGe:C 130-nm BiCMOS technology, featuring $\text{f}_{t}/\text{f}_{\text {max}}$ of 250/340 GHz. This bidirectional PALNA architecture avoids the use of lossy transmit–receive switches by introducing a proper matching network that insures a good isolation when the amplifier is OFF and satisfies the input–output matching requirements when the amplifier is on. On-wafer measurements show that the designed PALNA has a peak small-signal gain of 16.5 and 17 dB in the Tx mode and Rx mode, respectively, with a reverse isolation better than 40 dB while maintaining wideband performance over the desired band from 57 to 66 GHz. In the Rx mode, the simulated noise figure (NF) is 6.5 dB over the required band. Furthermore, a 1-dB compression point (OP1dB) of 11 dBm in the Tx mode and an input 1-dB compression point (IP1dB) of −20 dBm in the Rx mode have been achieved. The switchless PALNA occupies only 0.18 mm² and consumes 130 and 36 mW in the Tx and Rx modes, respectively.

中文翻译：

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采用 SiGe:C BiCMOS 技术的 V 波段小型化双向无开关 PALNA

这封信提出了一个 $V$ -采用 SiGe:C 130-nm BiCMOS 技术的频段无开关双向功率放大器 - 低噪声放大器 (PALNA)，具有 $\text{f}_{t}/\text{f}_{\text {max}}$ 250/340 GHz。这种双向 PALNA 架构通过引入适当的匹配网络来避免使用有损发射-接收开关，该网络可确保在放大器关闭时实现良好的隔离，并在放大器开启时满足输入-输出匹配要求。晶圆上测量表明，设计的 PALNA 在 Tx 模式和 Rx 模式下分别具有 16.5 和 17 dB 的峰值小信号增益，反向隔离优于 40 dB，同时在 57 至66 GHz。在 Rx 模式下，模拟噪声系数 (NF) 在所需频段上为 6.5 dB。此外，还实现了 Tx 模式下 11 dBm 的 1-dB 压缩点 (OP1dB) 和 Rx 模式下 -20 dBm 的输入 1-dB 压缩点 (IP1dB)。无开关 PALNA 仅占用 0.18 mm ² 并且在 Tx 和 Rx 模式下分别消耗 130 和 36 mW。