We report the electrical detection of the antiferromagnetic state of IrMn through anomalous Hall measurements in Ta/IrMn heterostructures. The magnetic state is set in the antiferromagnet through field cooling and detected electrically by transverse resistance measurements in Hall bar structures without the need for any ferromagnetic layer. The amplitude of the signal increases with the magnetic field applied during the cooling and is enhanced by the proximal interface with a Ta layer. From the temperature dependence of the effect and the comparison between Ta/IrMn and Ru/IrMn interfaces, we propose an explanation of such readouts based on the simultaneous occurrence of spin-Hall magnetoresistance and magnetic proximity in Ta. These findings highlight how interface effects could be generally employed for the investigation of antiferromagnetic materials as well as for the electrical readout of the antiferromagnetic state.

中文翻译：

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通过异常霍尔效应电读出 IrMn 的反铁磁态

我们通过 Ta/IrMn 异质结构中的异常霍尔测量报告了 IrMn 的反铁磁状态的电检测。通过场冷却在反铁磁体中设置磁性状态，并通过霍尔棒结构中的横向电阻测量进行电气检测，无需任何铁磁层。信号的幅度随着冷却过程中施加的磁场而增加，并通过与 Ta 层的近端界面增强。从效应的温度依赖性以及 Ta/IrMn 和 Ru/IrMn 界面之间的比较，我们基于 Ta 中自旋霍尔磁阻和磁接近度的同时发生提出了对此类读数的解释。