Pure perovskite phase, (001)-oriented, epitaxial thin films of (Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 (PMN-PT) were fabricated on single crystal, (001)-oriented SrTiO3 substrates using a hard (Fe-doped) and soft doped (Nb-doped) PZT(52/48) interfacial layer. The effect of different interface layers on the structural and ferroelectric properties of the PMN-PT films was investigated in detail. A significant self-bias voltage in the PMN-PT films can be introduced by using an appropriate interfacial layer. There are significant differences in polarization for different types of doped and undoped interface layers and a doubling of the relative dielectric constant was observed for the Nb-doped interfacial layer. Device properties remain stable up to at least 108 cycles.

中文翻译：

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薄（掺杂）PZT 界面层对外延 PMN-PT 薄膜性能的影响

纯钙钛矿相、(001) 取向的 (Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 (PMN-PT) 薄膜是在单晶、(001) 取向的 SrTiO3 衬底上制造的硬（Fe 掺杂）和软掺杂（Nb 掺杂）PZT(52/48) 界面层。详细研究了不同界面层对 PMN-PT 薄膜结构和铁电性能的影响。通过使用适当的界面层，可以在 PMN-PT 薄膜中引入显着的自偏置电压。不同类型的掺杂和未掺杂界面层的极化存在显着差异，并且观察到 Nb 掺杂界面层的相对介电常数加倍。器件性能在至少 108 次循环内保持稳定。