Materials featuring anomalous suppression of density fluctuations over large length scales are emerging systems known as disordered hyperuniform. The underlying hidden order renders them appealing for several applications, such as light management and topologically protected electronic states. Spontaneous formation of stable patterns could be a realistic solution for the implemen- tation of this peculiar class of materials via bottom-up approaches. However, scalable fabrication methods for disordered hyperuniform architectures are missing, especially for nanometric structures with high dielectric constant, limiting their potential application over large-scale. Here we show for the first time that mono-crystalline semiconductor-based structures can undergo spinodal solid- state dewetting and that they feature correlated disorder with an effective hyperuniform character. Nano- to micrometric sized structures can be engineered using device-friendly, silicon-on-insulator substrates and Si 1-x Ge x deposition. Phase-field simulations explain the underlying non-linear dy- namics and the physical origin of the emerging patterns, which rely on solid-state dewetting trig- gered by elasticity. Our method is a distinct and scalable approach for the controlled self-assembly of mono-crystalline, dielectric, disordered hyperuniform metamaterials towards the manipulation of electricity, fluids, and light.

中文翻译：

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旋节线固态去湿的超均匀单晶结构

具有在大尺度上异常抑制密度波动的材料是被称为无序超均匀性的新兴系统。潜在的隐藏顺序使它们吸引了多种应用程序，例如光管理和受拓扑保护的电子状态。通过自下而上的方法，自发形成稳定的图案可能是实现这种特殊材料类型的现实解决方案。但是，缺少用于无序超均匀体系结构的可扩展制造方法，特别是对于具有高介电常数的纳米结构，这限制了它们在大规模应用方面的潜力。在这里，我们首次展示了基于单晶半导体的结构可以经历旋节线固态去湿，并且它们具有有效的超均匀特征的相关无序特征。可以使用设备友好的绝缘体上硅衬底和Si 1-x Ge x沉积来设计纳米级到微米级的结构。相场模拟解释了潜在的非线性动力学和新兴模式的物理起源，它们依赖于由弹性触发的固态去湿。我们的方法是一种独特且可扩展的方法，用于控制电，流体和光的单晶，介电，无序超均匀超材料的自组装。绝缘体上硅衬底和Si 1-x Ge x沉积。相场模拟解释了潜在的非线性动力学和新兴模式的物理起源，它们依赖于由弹性触发的固态去湿。我们的方法是一种独特且可扩展的方法，用于控制电，流体和光的单晶，介电，无序超均匀超材料的自组装。绝缘体上硅衬底和Si 1-x Ge x沉积。相场模拟解释了潜在的非线性动力学和新兴模式的物理起源，它们依赖于由弹性触发的固态去湿。我们的方法是一种独特且可扩展的方法，用于控制电，流体和光的单晶，介电，无序超均匀超材料的自组装。