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Ultralow Thermal Conductivity and High Thermoelectric Performance of N-type Bi2Te2.7Se0.3-Based Composites Incorporated with GaAs Nanoinclusions.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-08-07 , DOI: 10.1021/acsami.0c09338 Jinhua Zhang 1, 2, 3 , Hongwei Ming 1, 2 , Di Li 1 , Xiaoying Qin 1 , Jian Zhang 1 , Lulu Huang 1, 2 , Chunjun Song 1 , Ling Wang 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-08-07 , DOI: 10.1021/acsami.0c09338 Jinhua Zhang 1, 2, 3 , Hongwei Ming 1, 2 , Di Li 1 , Xiaoying Qin 1 , Jian Zhang 1 , Lulu Huang 1, 2 , Chunjun Song 1 , Ling Wang 1
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Bi2Te2.7Se0.3 (BTS) is known to be the unique n-type commercial thermoelectric (TE) alloy used at room temperatures, but its figure of merit (ZT) is relatively low, and it is vital to improve its ZT for its wide applications. Here, we show that incorporation of an appropriate amount of GaAs nanoparticles in BTS not only causes the large enhancement of Seebeck coefficients because of energy-dependent carrier scattering, but also gives rise to drastic reduction of lattice thermal conductivity κL. Specifically, ultralow κL ∼ 0.27W m–1 K–1 (at 300 K) is achieved for the composite sample incorporated with a 0.3 wt % GaAs nanophase, which is proved to originate mainly from the intensified phonon scattering by the GaAs nanoinclusions and interfaces between the GaAs and BTS matrix. As a result, a maximum ZT = 1.19 (∼372 K) and an average ZTave = 1.01 (at T = 300–550 K) are reached in the composite sample with 0.3 wt % GaAs nanoinclusions, which are respectively ∼78% and ∼82% larger than those of the BTS matrix in this study, demonstrating that incorporation of the GaAs nanophase is an effective way to improve TE performance of BTS.
中文翻译：
基于GaAs纳米夹杂物的N型Bi2Te2.7Se0.3基复合材料的超低导热性和高热电性能。
的Bi 2特2.7硒0.3（BTS）被称为是独特的n型商用热电（TE）在室温下合金使用，但优值（其图ZT）是相对低的，并且它是提高其重要的ZT为其广泛的应用。在这里，我们示出了BTS的GaAs纳米颗粒的适当量的该掺入不仅使大增强，因为能量依赖性载体飞散的塞贝克系数，但也产生了急剧降低晶格热导率κ的大号。具体而言，超低κ大号〜0.27W米-1 ķ -1掺入0.3 wt％GaAs纳米相的复合材料样品在300 K时达到了（300 K），这被证明主要来自GaAs纳米夹杂物和GaAs与BTS基质之间界面的增强声子散射。结果，在具有0.3 wt％GaAs纳米夹杂物的复合样品中，最大ZT = 1.19（〜372 K）和平均ZT ave = 1.01（在T = 300-550 K时），分别为〜78％和在这项研究中，比BTS基质大约82％，这表明掺入GaAs纳米相是提高BTS TE性能的有效方法。
更新日期：2020-08-19
中文翻译：
基于GaAs纳米夹杂物的N型Bi2Te2.7Se0.3基复合材料的超低导热性和高热电性能。
的Bi 2特2.7硒0.3（BTS）被称为是独特的n型商用热电（TE）在室温下合金使用，但优值（其图ZT）是相对低的，并且它是提高其重要的ZT为其广泛的应用。在这里，我们示出了BTS的GaAs纳米颗粒的适当量的该掺入不仅使大增强，因为能量依赖性载体飞散的塞贝克系数，但也产生了急剧降低晶格热导率κ的大号。具体而言，超低κ大号〜0.27W米-1 ķ -1掺入0.3 wt％GaAs纳米相的复合材料样品在300 K时达到了（300 K），这被证明主要来自GaAs纳米夹杂物和GaAs与BTS基质之间界面的增强声子散射。结果，在具有0.3 wt％GaAs纳米夹杂物的复合样品中，最大ZT = 1.19（〜372 K）和平均ZT ave = 1.01（在T = 300-550 K时），分别为〜78％和在这项研究中，比BTS基质大约82％，这表明掺入GaAs纳米相是提高BTS TE性能的有效方法。
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