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Current Modulation by Optoelectric Control of Ferroelectric Domains
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-08-07 , DOI: 10.1021/acsaelm.0c00497 Gaurav Vats 1 , Jani Peräntie 2 , Jaakko Palosaari 2 , Jari Juuti 2 , Jan Seidel 1 , Yang Bai 2
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-08-07 , DOI: 10.1021/acsaelm.0c00497 Gaurav Vats 1 , Jani Peräntie 2 , Jaakko Palosaari 2 , Jari Juuti 2 , Jan Seidel 1 , Yang Bai 2
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Optoelectric control of domains is likely to pave the foundation for optoferroelectric devices. This work reports the combined effect of light and low-voltage electric bias for optoelectric control of ferroelectric domains in a semiconducting ceramic material—KNBNNO ((K0.5Na0.5)NbO3 doped with 2 mol % Ba(Ni0.5Nb0.5)O3−δ). The effect is utilized to achieve two orders of magnitude amplification in electrical response, asymmetric AC modulation, and domain velocities of 30 000 nm s–1 with ultralarge domain switching areas of over 30 μm in fractions of a second. The charge injection due to light illumination on this material causes the tuning of material conductivity and acts as a virtual electrode. Based on this mechanism, a proof of concept for a monolithic ferroelectric light-effect transistor with a source and drain as electrical contacts with light acting as a virtual gate is demonstrated. This is likely to offer a potential solution to the scaling limit of conventional three-terminal transistors. The same device is also demonstrated to work as a photodiode, a half-wave rectifier, and an electrical output modulator.
中文翻译：
通过铁电域的光电控制进行电流调制
域的光电控制可能为光电铁电设备奠定基础。这项工作报告了光和低压电偏压对半导体陶瓷材料KNBNNO（（K 0.5 Na 0.5）NbO 3掺杂2 mol％Ba（Ni 0.5 Nb 0.5）O 3的铁电畴的光电控制的联合作用-δ）。该效应可在电响应，非对称AC调制和30 000 nm s –1的域速度方面实现两个数量级的放大只需不到几分之一秒的时间，即可实现超过30μm的超大域切换面积。由于光照在该材料上而产生的电荷注入会导致材料电导率的调整并充当虚拟电极。基于这种机制，演示了一种单片铁电光效应晶体管的概念验证，该晶体管的源极和漏极与作为虚拟栅极的光形成电接触。这很可能为传统的三端晶体管的缩放极限提供潜在的解决方案。还证明了该器件可以用作光电二极管，半波整流器和电输出调制器。
更新日期：2020-09-22
中文翻译：
通过铁电域的光电控制进行电流调制
域的光电控制可能为光电铁电设备奠定基础。这项工作报告了光和低压电偏压对半导体陶瓷材料KNBNNO（（K 0.5 Na 0.5）NbO 3掺杂2 mol％Ba（Ni 0.5 Nb 0.5）O 3的铁电畴的光电控制的联合作用-δ）。该效应可在电响应，非对称AC调制和30 000 nm s –1的域速度方面实现两个数量级的放大只需不到几分之一秒的时间，即可实现超过30μm的超大域切换面积。由于光照在该材料上而产生的电荷注入会导致材料电导率的调整并充当虚拟电极。基于这种机制，演示了一种单片铁电光效应晶体管的概念验证，该晶体管的源极和漏极与作为虚拟栅极的光形成电接触。这很可能为传统的三端晶体管的缩放极限提供潜在的解决方案。还证明了该器件可以用作光电二极管，半波整流器和电输出调制器。
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