Abstract

In this paper, the main aim is estimation the effect of magnetic field, initial stress on reflection waves phenomena in a semiconductor photothermal diffusion medium considering Classical (CT) and dual-phase-lag (DPL) theories. The problem is formulated considering a generalized model for plasma, thermoelastic waves under thermomechanical response of a reflection of photothermal diffusion for semiconductor material. Maxwell's equations are applied taking into account absence of displacement current and infinite conducting medium. The boundary conditions are applied for mechanical and Maxwell's stresses, temperature gradient, chemical reaction, and diffusion on the interface adjacent to the vacuum. The reflection coefficient ratios have been obtained as functions of angle of incidence, magnetic field, initial stress, diffusion, photothermal, and semiconducting analytically and displayed graphically. A comparison has been made between the CT and DPL theories, as well as between the present results and the results obtained by others. The results of the present paper are a generalization of photothermal semiconductor medium and deduces to a special case if the new parameters are neglected. If the initial stress and magnetic field neglect, the results obtained in the current paper is deduces to the results obtained by others as a special case from this study.

摘要

在本文中，主要目的是考虑经典（CT）和双相位滞后（DPL）理论估计磁场、初始应力对半导体光热扩散介质中反射波现象的影响。该问题是考虑等离子体、热弹性波在半导体材料的光热扩散反射的热机械响应下的广义模型而制定的。考虑到没有位移电流和无限导电介质，应用麦克斯韦方程。边界条件适用于与真空相邻的界面上的机械应力和麦克斯韦应力、温度梯度、化学反应和扩散。反射系数比已作为入射角、磁场、初始应力、扩散、光热、半导体分析和图形显示。对 CT 和 DPL 理论以及目前的结果和其他人获得的结果进行了比较。本文的结果是光热半导体介质的一般化，如果忽略新参数，则推导出一种特殊情况。如果忽略初始应力和磁场，本论文得到的结果作为本研究的一个特例，是对他人得到的结果的推论。本文的结果是光热半导体介质的一般化，如果忽略新参数，则推导出一种特殊情况。如果忽略初始应力和磁场，本论文得到的结果作为本研究的一个特例，是对他人得到的结果的推论。本文的结果是光热半导体介质的一般化，如果忽略新参数，则推导出一种特殊情况。如果忽略初始应力和磁场，本论文得到的结果作为本研究的一个特例，是对他人得到的结果的推论。