The top‐down lithographic fabrication of functional metal oxide nanostructures enables technologically important applications such as catalysis and electronics. Here, we report the use of molecular vanadium oxides, polyoxovanadates, as molecular precursors for electron beam lithography to obtain functional vanadium oxide nanostructures. The new resist class described gives access to nanostructures with minimum dimensions close to 10 nm. The lithographically prepared structures exhibit temperature‐dependent switching behaviour of their electrical resistivity. The work could lay the foundation for accessing functional vanadium oxide nanostructures in the sub‐10‐nm domain using industrially established nanolithographic methods.

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具有可变电阻率的基于聚氧钒酸盐的纳米结构的纳米光刻自上而下的图案

自上而下的功能金属氧化物纳米结构的平版印刷制造可实现技术上重要的应用，例如催化和电子学。在这里，我们报告使用分子钒氧化物，聚氧钒酸盐，作为电子束光刻的分子前体以获得功能性钒氧化物纳米结构。所描述的新抗蚀剂类别使人们可以接触到最小尺寸接近10 nm的纳米结构。光刻制备的结构表现出其电阻率随温度变化的开关行为。这项工作可以为使用工业上建立的纳米光刻方法访问亚10纳米域内的功能性钒氧化物纳米结构奠定基础。