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Life-time degradation of STT-MRAM by self-heating effect with TDDB model
Solid-State Electronics ( IF 1.4 ) Pub Date : 2020-08-08 , DOI: 10.1016/j.sse.2020.107878
Xue Zhang , Guangjun Zhang , Lijie Shen , Pingping Yu , Yanfeng Jiang

Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising candidates for “universal memory” with the ultra-fast access speed, radiation resistance and theoretically unlimited endurance. However, there are many practical aspects that could degrade the life-time of STT-MRAM. In this paper, degradation on the life-time of the STT-MTJ device is observed experimentally, which is attributed to the so-called “self-heating effect” of the device. Simulation on the device is conducted on the self-heating effect to obtain the internal temperature inside the device. The self-heating effect of the STT-MTJ device is analyzed and its influence on the life-time degradation of the STT-MTJ is included in the time dependent dielectric breakdown model (TDDB, 1/E model). This inclusion should improve the accuracy of the estimation on the life-time.



中文翻译:

TDDB模型通过自热效应使STT-MRAM的寿命退化

自旋转移力矩磁性随机存取存储器(STT-MRAM)具有超快的存取速度,抗辐射性和理论上无限的耐用性,是“通用存储器”最有希望的候选者之一。但是,有许多实际方面可能会降低STT-MRAM的寿命。在本文中,通过实验观察到了STT-MTJ器件寿命的下降,这归因于该器件的所谓“自热效应”。通过自热效应对设备进行仿真,以获取设备内部的内部温度。分析了STT-MTJ器件的自热效应,并将其对STT-MTJ的寿命退化的影响包括在时间相关的介电击穿模型(TDDB,1 / E模型)中。

更新日期:2020-08-08
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