Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising candidates for “universal memory” with the ultra-fast access speed, radiation resistance and theoretically unlimited endurance. However, there are many practical aspects that could degrade the life-time of STT-MRAM. In this paper, degradation on the life-time of the STT-MTJ device is observed experimentally, which is attributed to the so-called “self-heating effect” of the device. Simulation on the device is conducted on the self-heating effect to obtain the internal temperature inside the device. The self-heating effect of the STT-MTJ device is analyzed and its influence on the life-time degradation of the STT-MTJ is included in the time dependent dielectric breakdown model (TDDB, 1/E model). This inclusion should improve the accuracy of the estimation on the life-time.

自旋转移力矩磁性随机存取存储器（STT-MRAM）具有超快的存取速度，抗辐射性和理论上无限的耐用性，是“通用存储器”最有希望的候选者之一。但是，有许多实际方面可能会降低STT-MRAM的寿命。在本文中，通过实验观察到了STT-MTJ器件寿命的下降，这归因于该器件的所谓“自热效应”。通过自热效应对设备进行仿真，以获取设备内部的内部温度。分析了STT-MTJ器件的自热效应，并将其对STT-MTJ的寿命退化的影响包括在时间相关的介电击穿模型（TDDB，1 / E模型）中。