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The effect of cobalt ions doping on the optical properties of ZnS quantum dots according to photoluminescence intensity and crystalline structure
Physica B: Condensed Matter ( IF 2.8 ) Pub Date : 2020-08-07 , DOI: 10.1016/j.physb.2020.412414
Aysh Y. Madkhli , W. Shirbeeny

The doping of Co2+ into ZnS QD offered a considerable luminescence intensity in the UV region and controlling of the Quantum Dot (QD) size. A performed X-ray diffraction (XRD) study revealed a cubic phase of the d-spacing 0.32 nm for a Co2+ concentration level of 0.005. The grain size varied between 3.9 nm and 7.5 nm for concentrations between 0.001 and 0.01. The obtained photoluminescence (PL) spectrum revealed a dependence of emission intensity and QD bandgap on the dopant concentration. With the help of TEM imaging, it has been shown that the size of the QD was about 4.8 nm. Prepared bulk samples of the Zn1-xSCox, with 0.001 < x < 0.01 have bandgap energies that varied from 2.69 eV for the concentration 0.001 down to 2.46 eV for 0.01. The calculated QD size ranged from 5.84 nm to 4.46 nm, which verified the QD size dependence on the dopant concentration and confirmed quantum confinement.



中文翻译:

根据光致发光强度和晶体结构,钴离子掺杂对ZnS量子点光学性能的影响

将Co 2+掺杂到ZnS QD中可在UV区提供相当大的发光强度,并控制量子点(QD)尺寸。进行的X射线衍射(XRD)研究表明,对于0.005的Co 2+浓度水平,d间距为0.32 nm的立方相。对于0.001至0.01的浓度,晶粒尺寸在3.9nm至7.5nm之间变化。所获得的光致发光(PL)光谱显示出发射强度和QD带隙对掺杂剂浓度的依赖性。借助于TEM成像,已经显示出QD的尺寸为约4.8nm。制备的Zn 1-x SCo x散装样品,当0.001 <x <0.01时,带隙能量从浓度0.001的2.69 eV降低到0.01的2.46 eV。计算出的QD尺寸范围为5.84 nm至4.46 nm,这证实了QD尺寸取决于掺杂剂浓度并确认了量子限制。

更新日期:2020-08-08
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