The measuring current effect on low-temperature resistivity of Bi_1.9Lu_0.1Te₃ has been analyzed. Values of currents correspond to weak electric fields with strength of several V·m⁻¹. Temperature behavior of the resistivity is connected to two mechanisms. High-temperature mechanism (above 35 K) is due to acoustic phonon scattering. For this mechanism, the resistivity is growing with both increasing temperature and increasing current (positive current effect). Low-temperature mechanism (below 35 K) results in appearance of resistivity minimum at low temperatures. Below the minimum, the resistivity is growing with decreasing temperature. This feature is originated from contribution from variable-range hopping conductivity. With increasing current, the resistivity is falling (negative current effect). Crossover from positive to negative current effect on the resistivity occurs with decreasing temperature. Positive effect is originated from saturation of drift velocity of electrons under electric field. Negative effect is due to activation of hopping conductivity via electric field.

分析了Bi _1.9 Lu _0.1 Te ₃的测量电流对低温电阻率的影响。电流值对应于强度为几V·m ^-1的弱电场。电阻率的温度行为与两个机理有关。高温机制（高于35 K）归因于声子声子的散射。对于这种机制，电阻率随温度和电流的增加而增加（正电流效应）。低温机制（低于35 K）导致在低温下出现最小电阻率。低于最小值时，电阻率随温度降低而增长。此功能源自可变范围跳变电导率的贡献。随着电流的增加，电阻率下降（负电流效应）。随着温度的降低，发生从正电流到负电流对电阻率的影响。正效应源自电场下电子漂移速度的饱和。