Hybrid plasmonic (HP) waveguides have attracted a lot of attention in recent years for its ability to provide long propagation length along with subwavelength confinement. In this study, the effect of InGaAsP(Q) layer etch depth on an InP-based HP-waveguide was investigated. Then, the layer thicknesses were optimized to achieve a maximum propagation length of 80 µm and the minimum effective area of 0.03 µm² indicating a significant improvement compared to previous studies. Meanwhile, the coupling length of a directional coupler for various etch depth was calculated. Finally, the effect of the etch depth on the optical power transmission of the 90° curved waveguide and coupling between the curved and straight waveguides were determined.

混合等离子（HP）波导近年来因其提供长传播长度以及亚波长限制的能力而备受关注。在这项研究中，研究了InGaAsP（Q）层蚀刻深度对基于InP的HP波导的影响。然后，对层厚度进行优化，以实现最大传播长度为80 µm，最小有效面积为0.03 µm ^2，这表明与以前的研究相比有显着改善。同时，计算了针对各种蚀刻深度的定向耦合器的耦合长度。最后，确定蚀刻深度对90°弯曲波导的光功率传输以及弯曲波导和直线波导之间耦合的影响。