Abstract

Microstructures in the form of meanders are widely used as elements of magnetoresistive and magnetoimpedance (MI) sensors. In this paper, for the structures of the “microstrip line” type and the N-shaped meanders prepared from amorphous CoFeNiSiB ribbon, the MI effect is studied in the longitudinal (LMI) and transverse (TMI) configurations. The LMI effect reaches 180%, which is significantly higher than in the case of tapes of the same size (5 mm) without microstructuring.

中文翻译：

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非晶态CoFeNISiB带的磁性能和巨磁阻抗。

摘要

弯曲形式的微结构被广泛用作磁阻和磁阻（MI）传感器的元件。在本文中，对于“微带线”类型的结构和由非晶态CoFeNiSiB带制成的N形弯曲，研究了纵向（LMI）和横向（TMI）构型的MI效应。LMI效果达到180％，这明显高于没有微结构的相同尺寸（5毫米）的胶带的情况。