A potassium titanyl arsenate (KTiOAsO 4 , KTA) crystal 50 × 80 × 60 mm in size has been grown by upgraded Czochralski method from flux (TGGS) with a decrease in temperature from 900 to 770 °C during pulling. It is shown that the spectroscopic properties of the parts of KTA crystals grown at 900 and 770 °C are close, whereas the electrical conductivity of the low-temperature (770 °C) KTA part turned out to be an order of magnitude lower than that of the high-temperature part. Visualisation of the domain structure by second-harmonic generation microscopy revealed a more efficient domain intergrowth (throughout the sample) in the low-temperature KTA, which is important for forming a regular domain structure (RDS) in a KTA-based nonlinear optical element. It is established that the quantum efficiency of parametric generation of light in the RDS formed in low-temperature KTA is several times higher than in the case of high-temperature KTA. The results obtained are important for...

中文翻译：

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KTiOAsO 4单晶的生长温度对其理化参数和畴结构形成的影响

通过升级的切克劳斯基（Czochralski）方法从助熔剂（TGGS）中生长出尺寸为50×80×60 mm的砷化钛酸钾（KTiOAsO 4，KTA）晶体，并且在拉拔过程中将温度从900℃降低至770℃。结果表明，在900和770°C下生长的KTA晶体各部分的光谱性质接近，而低温（770°C）KTA部分的电导率却比其低一个数量级。高温部分。通过二次谐波生成显微镜对畴结构的可视化显示，在低温KTA中（整个样品中）更有效的畴共生，这对于在基于KTA的非线性光学元件中形成规则的畴结构（RDS）非常重要。可以确定的是，在低温KTA中形成的RDS中，光的参数生成的量子效率是高温KTA情况下的几倍。获得的结果对...很重要。