Graphene nanoribbon Field Effect Transistor (GNRFET) as a recently introduced interesting candidate has gotten a great deal of interest in many device fields. The paper has suggested a novel configuration in the case of only single gate on the top channel. The GNR is deposited on SiO 2 considered as the thick buried oxide instead of SiC material in the single gate conventional GNRFET. This reformation is led to the gradual variation of the surface potential thus increasing the electric field and electron velocity. An increase in the drain current for the proposed device is the most important exploration in this work. The numerically extracted parameters by TCAD revealed the electrical performance improvement for both the DC and RF conditions in the cases of the ON current, sub-threshold swing, DIBL, I on /I off , parasitic capacitances, transconductance, power gains, and output conductance. It is worth noting that the short channel effects are well co...

中文翻译：

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单栅极绝缘体上石墨烯纳米带（GNROI）FET作为提高电气性能的新策略-数字RF和DC特征提取

石墨烯纳米带场效应晶体管（GNRFET）作为最近推出的有趣候选器件，已经在许多器件领域引起了极大兴趣。该论文提出了一种在顶部通道上只有单个栅极的情况下的新颖配置。在单栅传统GNRFET中，将GNR沉积在被视为厚掩埋氧化物的SiO 2上，代替SiC材料。这种重整导致表面电势的逐渐变化，从而增加了电场和电子速度。在这项工作中，最重要的探索是增加所建议器件的漏极电流。TCAD的数字化提取参数表明，在导通电流，亚阈值摆幅，DIBL，I on / I off，寄生电容，跨导，功率增益和输出电导。值得注意的是，短通道效应很好地结合了...