Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament,Advanced Electronic Materials

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Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-08-06 , DOI: 10.1002/aelm.202000488
Writam Banerjee ₁ , Hyunsang Hwang ₁

Affiliation

This study demonstrates a systematic approach to design a sub‐quantum selector‐less conductive bridge random access memory (CBRAM) which can work as one‐selector‐one‐resistor device in Cu/Ti/HfO₂/TiO₂/TiN material stack, can work nicely from sub‐µA to sub‐nA range. Optimized high thermal forming scheme is investigated to control the anatomy of filament formation at sub‐nA current level. The thickness of HfO₂ layer plays a crucial role in determining such behavior. Hence, in this study the precise stack engineering is proposed and the selector‐less device design which can show highly stable one‐selector‐one‐resistor type performance at sub‐quantum level is identified. The TiO₂‐based selector device is verified experimentally and theoretically. The presence of 1 eV deep level traps by CuO defect sites in HfO₂ matrix with calculated nearest neighbor of 0.7 nm along with the presence of TiO₂ selector layer, is the origin of highly nonlinear behavior. The devices show ultra‐low leakage current of 300 fA (system limitation) and operated with ultra‐low power of 5 pW, very high resistance ratio of 3 × 10³, with high nonlinearity of 3 × 10³. This work establishes the possibility to design ultra‐low power nonvolatile sub‐quantum CBRAM device which can fulfill the needs of internet of things applications after optimization.

中文翻译：

通过控制亚量子线来了解少选1S1R型基于铜的CBRAM器件

这项研究展示了一种系统化的方法来设计亚量子级的无选择导电桥随机存取存储器（CBRAM），该存储器可以用作Cu / Ti / HfO ₂ / TiO ₂ / TiN材料叠层中的单选一电阻器件，从亚微安到亚纳安范围都可以很好地工作。研究了优化的高热成型方案，以在亚纳安电流水平下控制细丝形成的解剖结构。HfO ₂层的厚度在确定这种行为方面起着至关重要的作用。因此，在这项研究中，提出了精确的堆栈工程，并确定了无选择器器件设计，该设计可以在亚量子级显示出高度稳定的单选一电阻类型性能。TiO ₂基于选择器的设备已通过实验和理论验证。HfO ₂基质中CuO缺陷位点存在1 eV深能级陷阱，计算出的最近邻为0.7 nm，并且存在TiO ₂选择层，是高度非线性行为的起源。该装置上显示300 FA（系统限制）的超低漏电流，并用5 PW时，3×10非常高的电阻率的超低功率操作³，用3×10高非线性³。这项工作为设计超低功耗非易失性亚量子CBRAM器件提供了可能性，该器件可以在优化后满足物联网应用的需求。

更新日期：2020-09-08

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