Abstract A solar light sensitive ZnO1-xMgOx/n-Si photodiode was fabricated using magnesium oxide (MgO) and zinc oxide (ZnO). The current-bias voltage (I-V) and capacitance-bias voltage (C-V) measurements were performed to analyze charge transport mechanism of the diode. The photosensitive behavior of the diodes were investigated under solar irradiation ranging from 20 mW/cm2 to 100 mW/cm2. The photocurrent of the diodes is increased with increasing illumination intensity. It is seen that the ZnO1-xMgOx/n-Si photodiode is switched by solar light irradiation. The diodes exhibited a high photoresponse. The photosensor behavior of ZnO1-xMgOx/n-Si photodiode is exhibited a linear photoconducting behavior for optic switching applications.

中文翻译：

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太阳光敏感 ZnO1-xMgOx/n-Si 光电二极管的制备

摘要 使用氧化镁 (MgO) 和氧化锌 (ZnO) 制备了一种太阳能光敏 ZnO1-xMgOx/n-Si 光电二极管。进行电流偏置电压 (IV) 和电容偏置电压 (CV) 测量以分析二极管的电荷传输机制。在 20 mW/cm2 至 100 mW/cm2 的太阳辐射下研究了二极管的光敏行为。二极管的光电流随着光照强度的增加而增加。可以看出，ZnO1-xMgOx/n-Si 光电二极管通过太阳光照射进行开关。二极管表现出高光响应。ZnO1-xMgOx/n-Si 光电二极管的光电传感器行为表现出用于光开关应用的线性光电导行为。