Abstract InxAl1-xAs1-ySby is the only III-V material lattice-matched to InP with a direct bandgap energy range as large as ~1.45–1.80 eV, making it interesting for multiple optoelectronic applications. However, inherent material challenges in this immature quaternary alloy have thus far precluded the growth of InxAl1-xAs1-ySby with device-quality properties at the InP lattice constant. We have investigated how molecular beam epitaxy growth conditions affect the photoluminescence intensity, spectrum, temperature- and power-dependence, as well as the surface morphology of In0.23Al0.77As0.75Sb0.25, which is lattice-matched to InP with bandgap energy of ~1.68 eV as measured by ellipsometry. We find that reducing the adatom mobility, via a lower substrate temperature and higher group-V overpressure, diminishes the tendency for phase separation, but also quenches the photoluminescence intensity. These findings provide a step toward identifying an optimal growth window for realizing high-quality, wide-bandgap InxAl1-xAs1-ySby lattice-matched to InP.

中文翻译：

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分子束外延生长条件对与 InP 晶格匹配的宽带隙 InAlAsSb 相分离的影响

摘要 InxAl1-xAs1-ySby 是唯一一种与 InP 晶格匹配的 III-V 族材料，其直接带隙能量范围高达 ~1.45–1.80 eV，使其在多种光电应用中备受关注。然而，迄今为止，这种不成熟的四元合金固有的材料挑战阻碍了 InxAl1-xAs1-ySby 在 InP 晶格常数下具有器件质量特性的生长。我们研究了分子束外延生长条件如何影响光致发光强度、光谱、温度和功率依赖性以及 In0.23Al0.77As0.75Sb0.25 的表面形貌，它与具有带隙能量的 InP 晶格匹配通过椭圆光度法测量的~1.68 eV。我们发现通过较低的衬底温度和较高的 V 族超压降低吸附原子迁移率，减少了相分离的趋势，但也会淬灭光致发光强度。这些发现为确定实现高质量、宽带隙 InxAl1-xAs1-ySby 与 InP 晶格匹配的最佳生长窗口迈出了一步。