Abstract

Macropores were prepared by electrochemical etching on p-type silicon. The effects of resistivity, etching time and HF concentration on the porosities and morphologies of macropores were investigated. It was found that the porosity of p-type macropores increased exponentially at the beginning with the increase of etching time under any other etching parameters. In addition, we discovered that HF concentration had significant effect on the surface and cross-section morphologies of macropores. The dependence of the macropore formation mechanism was discussed, and the hydrogen escape mechanism as well as current-burst-model (CBM) was employed to interpret the underlying mechanism and the morphology control during macropore formation.

中文翻译：

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p型硅上大孔的可控制备及形成机理

摘要

通过在p型硅上进行电化学蚀刻来制备大孔。研究了电阻率，刻蚀时间和HF浓度对大孔孔隙率和形貌的影响。发现在任何其他蚀刻参数下，随着蚀刻时间的增加，p型大孔的孔隙率在开始时呈指数增长。另外，我们发现HF浓度对大孔的表面和横截面形态具有显着影响。讨论了大孔形成机理的依赖性，并利用氢逸出机理和电流爆发模型（CBM）解释了大孔形成过程中的潜在机理和形态控制。